Realizing high figure of merit in heavy-band p-type half-Heusler thermoelectric materials
نویسندگان
چکیده
Solid-state thermoelectric technology offers a promising solution for converting waste heat to useful electrical power. Both high operating temperature and high figure of merit zT are desirable for high-efficiency thermoelectric power generation. Here we report a high zT of ∼1.5 at 1,200 K for the p-type FeNbSb heavy-band half-Heusler alloys. High content of heavier Hf dopant simultaneously optimizes the electrical power factor and suppresses thermal conductivity. Both the enhanced point-defect and electron-phonon scatterings contribute to a significant reduction in the lattice thermal conductivity. An eight couple prototype thermoelectric module exhibits a high conversion efficiency of 6.2% and a high power density of 2.2 W cm(-2) at a temperature difference of 655 K. These findings highlight the optimization strategy for heavy-band thermoelectric materials and demonstrate a realistic prospect of high-temperature thermoelectric modules based on half-Heusler alloys with low cost, excellent mechanical robustness and stability.
منابع مشابه
Enhancing the Figure of Merit of Heavy‐Band Thermoelectric Materials Through Hierarchical Phonon Scattering
Hierarchical scattering is suggested as an effective strategy to enhance the figure of merit zT of heavy-band thermoelectric materials. Heavy-band FeNbSb half-Heusler system with intrinsically low carrier mean free path is demonstrated as a paradigm. An enhanced zT of 1.34 is obtained at 1150 K for the Fe1.05Nb0.75Ti0.25Sb compound with intentionally designed hierarchical scattering centers.
متن کاملResolving the true band gap of ZrNiSn half-Heusler thermoelectric materials
Band structure parameters, such as the band gap, can be estimated using electrical transport properties. In many thermoelectric studies, the temperature dependent Seebeck coefficient is used to estimate the band gap using the Goldsmid–Sharp band gap formula: Eg 1⁄4 2eSmaxTmax. This important, fundamental parameter is useful for characterizing and understanding any semiconductor, but it is parti...
متن کاملEnhanced thermoelectric figure of merit of p-type half-Heuslers.
Half-Heuslers would be important thermoelectric materials due to their high temperature stability and abundance if their dimensionless thermoelectric figure of merit (ZT) could be made high enough. The highest peak ZT of a p-type half-Heusler has been so far reported about 0.5 due to the high thermal conductivity. Through a nanocomposite approach using ball milling and hot pressing, we have ach...
متن کاملEffect of C and N Addition on Thermoelectric Properties of TiNiSn Half-Heusler Compounds
We investigated the thermoelectric properties of the ternary half-Heusler compound, TiNiSn, when introducing C and N. The addition of C or N to TiNiSn leads to an enhanced power factor and a decreasing lattice thermal conductivity by point defect phonon scattering. The thermoelectric performances of TiNiSn alloys are significantly improved by adding 1 at. % TiN, TiC, and figure of merit (ZT) va...
متن کاملHalf-Heusler (TiZrHf)NiSn Unileg Module with High Powder Density
(TiZrHf)NiSn half-Heusler compounds were prepared by arc melting and their thermoelectric properties characterized in the temperature range between 325 K and 857 K, resulting in a Figure of Merit ZT ≈ 0.45. Furthermore, the prepared samples were used to construct a unileg module. This module was characterized in a homemade thermoelectric module measurement stand and yielded 275 mW/cm² and a max...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره 6 شماره
صفحات -
تاریخ انتشار 2015